W364M72V-XSBX dram equivalent, 64mx72 synchronous dram.
High Frequency = 100, 125MHz Package:
* 219 Plastic Ball Grid Array (PBGA), 32 x 25mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registe.
Laminate interposer for optimum TCE match
GENERAL DESCRIPTION
The 512MByte (4.5Gb) SDRAM is a high-speed CMOS, dynamic .
The 512MByte (4.5Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 512M bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s 134,217,728-bit banks is organize.
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